elektronische bauelemente SSQ04N60J 4 a, 600 v, r ds(on) 3 ? n-channel enhancement mode power mosfet 4-nov-2015 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 220 j rohs compliant product a suffix of -c specifies halogen free description this advanced high voltage mosfet is designed to wi thstand high energy in the avalanche mode and switch effici ently. this new high energy device also offers a drain-to-source di ode with fast recovery time. designed for high voltage, high spee d switching applications such as power supplies, converters, po wer motor control and bridge circuits. features high current rating low r ds(on) lower capacitance lower total gate charge tighter vsd specifications avalanche energy specified absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol rating unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current i d 4 a continuous drain-source diode forward current i s 4 a single pulse avalanche energy 1 e as 260 mj maximum lead temperature for soldering purposes@1/8 from case for 5 seconds t l 260 c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating thermal resistance from junction to ambient r ja 62.5 c/w 1 g 3 s d 2 millimeter millimeter ref. mi n. max. ref. min. max. a 10.010 10.350 i 4.980 5.180 b 3.735 3.935 j 3.560 3.960 c 2.590 2.890 k 4.470 4.670 d 12.060 12.460 l 1.200 1.400 e 1.170 1.370 m 8.500 8.900 f 0.710 0.910 n 2.520 2.820 g 13.400 13.800 q 0.330 0.650 h 2.540 typ.
elektronische bauelemente SSQ04N60J 4 a, 600 v, r ds(on) 3 ? n-channel enhancement mode power mosfet 4-nov-2015 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise noted) parameter symbol min. typ. max. unit test condition off characteristics drain-source breakdown voltage bv dss 600 - - v v gs =0, i d =250 a drain-source diode forward voltage 2 v sd - - 1.5 v v gs =0, i s =4a drain-source leakage current i dss - - 25 a v ds =600v, v gs =0 gate-source leakage forward current 2 i gssf - - 100 na v ds =0v, v gs =30v gate-source leakage reverse current 2 i gssr - - -100 na v ds =0v, v gs = -30v on characteristics 2 gate threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a static drain-source on-resistance r ds(on) - 2 3 v gs =10v, i d =2a forward transconductance g fs 2 2.6 - s v ds =50v, i d =2a dynamic characteristics input capacitance c iss - 540 - output capacitance c oss - 125 - reverse transfer capacitance c rss - 8 - pf v ds =25v v gs =0 f=1mhz switching characteristics total gate charge q g - 5 - gate-source charge q gs - 2.7 - gate-drain (miller) change q gd - 2 - nc v ds =480v v gs =10v i d =4a turn-on delay time t d(on) - 12 - rise time t r - 7 - turn-off delay time t d(off) - 19 - fall time t f - 10 - ns v dd =300v v gs =10v r g =9.1 i d =4a notes: 1. e as condition: l=30mh, i l =4a, v dd =100v, v gs =10v, r g =25 , starting t j =25c. 2. pulse test : pulse width 300 Q s, duty cycle 2%. Q
elektronische bauelemente SSQ04N60J 4 a, 600 v, r ds(on) 3 ? n-channel enhancement mode power mosfet 4-nov-2015 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
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